Channel backscattering characteristics of high performance germanium pMOSFETs

With its higher carrier mobilities and lower effective masses than silicon, germanium is a potential channel replacement material for future CMOS. Using data obtained from high performance Ge pMOSFETs with gate lengths down to 125 nm, we deduce values for the backscattering coefficient and ballisticity for temperatures in the range from 300 K to 4 K. We find there is considerable potential for future performance improvement for short channel lengths.