Title :
Influence of neodymium dopant on TiO2 structure
Author :
Zielinski, M. ; Wojcieszak, D. ; Domaradzki, J. ; Kaczmarek, D. ; Prociow, E.
Author_Institution :
Fac. of Microsyst. Electron. & Photonics, Wroclaw Univ. of Technol., Wroclaw, Poland
Abstract :
In this work structural properties of TiO2 thin films doped with different amounts of Nd have been presented. Thin films were deposited on silicon substrates using high energy reactive magnetron sputtering process and for the measurements TiO2 doped with 0.84 at. % and 8.51 at. % of Nd have been selected. Diversification of the thin film surface was investigated using atomic force microscope. The results have shown that distribution of grains size the thin films was dependent on the amount of neodymium dopant. Moreover structural characterization of the thin films with use of X-Ray Diffraction method has shown that different structure of the TiO2 thin films was received with selected amount of Nd (0.84 and 8.51 at. %) and by additional annealing.
Keywords :
X-ray diffraction; annealing; atomic force microscopy; grain size; neodymium; semiconductor growth; semiconductor materials; semiconductor thin films; silicon; sputter deposition; titanium compounds; AFM; Si; TiO2:Nd; X-ray diffraction method; XRD; annealing; atomic force microscope; grain size distribution; high energy reactive magnetron sputtering process; neodymium doping; silicon substrates; structural properties; thin film surface diversification; titania structure; titania thin films; Annealing; Grain size; Nanostructures; Neodymium; Surface roughness; Surface treatment; X-ray scattering;
Conference_Titel :
Electronics Technology (ISSE), 2010 33rd International Spring Seminar on
Conference_Location :
Warsaw
Print_ISBN :
978-1-4244-7849-1
Electronic_ISBN :
978-1-4244-7850-7
DOI :
10.1109/ISSE.2010.5547251
