• DocumentCode
    3517985
  • Title

    Efficiency enhancement in the thin film GaAs solar cell using photonic crystal as a back reflector

  • Author

    Gupta, Nikhil Deep ; Janyani, Vijay

  • Author_Institution
    Electron. & Commun. Eng. Dept, Malaviya Nat. Inst. of Technol., Jaipur, India
  • fYear
    2013
  • fDate
    17-18 Dec. 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Light trapping in the thin film solar cell has been studied for a while and is considered as among the most important parameter which may reduce the gap between the most efficient single junction thin film solar cell available till date and the theoretical Shockley-Queisser (SQ) Limit. Usually, metallic back reflectors are being used for the thin film solar cells. Here we are presenting an alternative method for single junction thin film GaAs solar cell using photonic crystals as a back reflecting mirror. We have used the photonic crystals (PhC) structure having GaAs rods having SiO2 in the background, which has improved absorption in the near band edge wavelength. The results of the numerical modelling using FDTD algorithm clearly indicate the efficiency improvement as compared to the metallic reflector as back mirror material.
  • Keywords
    III-V semiconductors; gallium arsenide; optical elements; photonic crystals; radiation pressure; semiconductor thin films; silicon compounds; solar cells; FDTD; GaAs-SiO2; Shockley-Queisser limit; back reflector; efficiency enhancement; finite difference time-domain algorithm; light trapping; near band edge wavelength; photonic crystal; single junction thin film GaAs solar cell; Crystals; Films; Periodic structures; Photonics; FDTD algorithm; Light trapping; Photonic crystals; Ssolar cells;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Recent Advances in Photonics (WRAP), 2013 Workshop on
  • Conference_Location
    New Delhi
  • Print_ISBN
    978-1-4799-4864-2
  • Type

    conf

  • DOI
    10.1109/WRAP.2013.6917647
  • Filename
    6917647