Title :
On the validity of the effective mass approximation and the luttinger k.p model in confined and strained 2D-holes-systems
Author :
Rideau, D. ; Feraille, M. ; Szczap, M. ; Tavernier, C. ; Jaouen, H.
Author_Institution :
STmicroelectronics, Crolles
Abstract :
The holes confined states in [001] -oriented 5 nm-thick relaxed silicon layer embedded in oxide are investigated using full-band k.p method within the envelop function approximation. Full-band calculations of important transport parameters - energy band shifts, curvature masses and density-of-state masses - show new results, rising the issues of the limit of simple models like the Effective Mass Approximation (EMA) and the 6-level k.p model.
Keywords :
MOSFET; effective mass; function approximation; 2D-holes-systems; Luttinger k.p model; MOSFET; effective mass approximation; envelop function approximation; Carrier confinement; Computational modeling; Computer aided manufacturing; Deformable models; Effective mass; Function approximation; MOSFET circuits; Schrodinger equation; Silicon; Virtual manufacturing;
Conference_Titel :
Ultimate Integration of Silicon, 2008. ULIS 2008. 9th International Conference on
Conference_Location :
Udine
Print_ISBN :
978-1-4244-1729-2
Electronic_ISBN :
978-1-4244-1730-8
DOI :
10.1109/ULIS.2008.4527141
