DocumentCode :
3518247
Title :
Back-Scattering in Quasi Ballistic NanoMOSFETs: The role of non thermal carrier distributions
Author :
Clerc, R. ; Palestri, P. ; Selmi, L. ; Ghibaudo, G.
Author_Institution :
IMEP LAHC, Minatec-INPG, Grenoble
fYear :
2008
fDate :
12-14 March 2008
Firstpage :
125
Lastpage :
128
Abstract :
In this work, the kT layer theory for quasi ballistic transport in nanodevices has been reinvestigated, underlying the impact of carrier heating on backscattering. Assuming a constant mean free path, a differential equation for the currents fluxes has been derived, including both the impact of collision and field on backscattering. By making proper approximations on the impact of heating on carrier distribution functions, the backscattering coefficient and velocity profiles have been re-derived, and successfully compared to Monte Carlo simulations of template potential profiles. These results open new perspectives in the development of new physically based compact models for MOSFETs, better accounting for non equilibrium transport effects.
Keywords :
MOSFET; Monte Carlo methods; differential equations; nanotechnology; Monte Carlo simulations; backscattering coefficient; carrier distribution functions; carrier heating; constant mean free path; differential equation; equilibrium transport effects; nonthermal carrier distributions; quasiballistic nanoMOSFET; quasiballistic transport; velocity profiles; Analytical models; Backscatter; Boltzmann equation; Distribution functions; MOSFETs; Monte Carlo methods; Scattering; Shape; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultimate Integration of Silicon, 2008. ULIS 2008. 9th International Conference on
Conference_Location :
Udine
Print_ISBN :
978-1-4244-1729-2
Electronic_ISBN :
978-1-4244-1730-8
Type :
conf
DOI :
10.1109/ULIS.2008.4527155
Filename :
4527155
Link To Document :
بازگشت