Unified model for low-field electron mobility in bulk and SOI-MOSFETs with different substrate orientations and its application to quantum drift-diffusion simulation

Author

Silvestri, L. ; Reggiani, S. ; Gnani, E. ; Gnudi, A. ; Baccarani, G.

Author_Institution

DEIS, Univ. of Bologna, Bologna

fYear

2008

fDate

12-14 March 2008

Firstpage

129

Lastpage

132

Abstract

This paper presents a novel unified model of the low-field electron mobility for bulk and silicon-on- insulator (SOI) FETs with different crystal orientations. By taking into account the influence of surface-orientation and current-flow direction on effective masses, carrier repopulation, and scattering rates, the experimentally observed mobilities are nicely reproduced for MOSFETs with silicon thicknesses down to 5 nm. The model has been implemented in a quantum drift-diffusion transport solver (QDD) and the effect of crystal orientation on SOI-MOSFET characteristics is investigated.

Keywords

MOSFET; crystal orientation; diffusion; electron mobility; semiconductor device models; silicon-on-insulator; substrates; SOI-MOSFETs; bulk FETs; carrier repopulation; crystal orientations; current-flow direction; low-field electron mobility; quantum drift-diffusion simulation; quantum drift-diffusion transport solver; silicon-on- insulator FETS; substrate orientations; surface-orientation; Effective mass; Electron mobility; Equations; FETs; MOSFETs; Manufacturing; Particle scattering; Predictive models; Quantization; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration of Silicon, 2008. ULIS 2008. 9th International Conference on

Conference_Location

Udine

Print_ISBN

978-1-4244-1729-2

Electronic_ISBN

978-1-4244-1730-8

Type

conf

DOI

10.1109/ULIS.2008.4527156

Filename

4527156