Title :
Two-dimensional simulation of the silicon nanowires thinning effect during the thermal oxidation
Author :
Kalinin, Sergey V. ; Egorkin, Andrey V.
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk, Russia
fDate :
June 29 2015-July 3 2015
Abstract :
The numerical simulation of the silicon nanowire (SiNW) thinning effect during the low-temperature dry thermal oxidation is carried out. For the simulation the two-dimensional mathematical model of the silicon thermal oxidation were used. It takes into account the dependence of the oxidation rate on mechanical stresses occurring in the structure and silicon dioxide nonlinear viscoelastic behavior. Obtained simulation results were compared with experimental data. The models parameters calibration was carried out.
Keywords :
elemental semiconductors; internal stresses; nanowires; oxidation; silicon; viscoelasticity; Si; low-temperature dry thermal oxidation; mechanical stresses; silicon dioxide nonlinear viscoelastic properties; silicon nanowire thinning effect; structural properties; two-dimensional mathematical model; Mathematical model; Nanowires; Numerical models; Oxidation; Semiconductor process modeling; Silicon; Stress; SiNW; TCAD Sentaurus; Two-dimensional simulation; nanowire; thermal oxidation;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2015 16th International Conference of Young Specialists on
Conference_Location :
Erlagol
Print_ISBN :
978-1-4673-6718-9
DOI :
10.1109/EDM.2015.7184479
