• DocumentCode
    3518375
  • Title

    Self-Limited Filament Formation and Low-Power Resistive Switching in CuxTe1-x/Al2O3/Si CBRAM Cell

  • Author

    Goux, L. ; Opsomer, K. ; Schuitema, R. ; Degraeve, R. ; Müller, R. ; Detavernier, C. ; Wouters, D.J. ; Jurczak, M. ; Altimime, L. ; Kittl, J.A.

  • Author_Institution
    IMEC, Leuven, Belgium
  • fYear
    2011
  • fDate
    22-25 May 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper we show the strong influence of the composition of the Cu-Te alloy on the conductive-bridging RAM operation of Cu-Te/Al2O3/Si cells. The Cu filament generated during forming and set operations requires lower reset current for lower x in the CuxTe1-x layer. Optimum memory operation is determined for the range 0.5<;x<;0.7, which allows self-limited filament programming using 5μA maximum current operation, highly stable switching observed over more than 103 cycles, and state stability verified up to 10 sec at 85° C. Attractively, the set switching voltage may also be adjusted by modulating the extent of filament erasure during reset operation.
  • Keywords
    aluminium compounds; copper compounds; low-power electronics; random-access storage; silicon; CBRAM cell; CuxTe1-x-Al2O3-Si; conductive-bridging RAM; current 5 muA; low-power resistive switching; self-limited filament formation; self-limited filament programming; temperature 85 degC; Aluminum oxide; Copper; Electrodes; Random access memory; Resistance; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Memory Workshop (IMW), 2011 3rd IEEE International
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    978-1-4577-0225-9
  • Electronic_ISBN
    978-1-4577-0224-2
  • Type

    conf

  • DOI
    10.1109/IMW.2011.5873219
  • Filename
    5873219
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3518375