DocumentCode :
3518464
Title :
Switching by Ni Filaments in a HfO2 Matrix: A New Pathway to Improved Unipolar Switching RRAM
Author :
Chen, Y.Y. ; Pourtois, G. ; Wang, X.P. ; Adelmann, C. ; Goux, L. ; Govoreanu, B. ; Pantisano, L. ; Kubicek, S. ; Altimime, L. ; Jurczak, M. ; Kittl, J.A. ; Groeseneken, G. ; Wouters, D.J.
Author_Institution :
imec, Leuven, Belgium
fYear :
2011
fDate :
22-25 May 2011
Firstpage :
1
Lastpage :
4
Abstract :
HfO2-based resistive RAM (RRAM) devices have received intensive research attention in the recent years. Most of the HfO2-based RRAM system demonstrates promising performance in bipolar mode. However, HfO2-based RRAM devices in unipolar mode so far, still suffers from low endurance (<;500 cycles), and non-integratable electrode materials such as Pt or Au. In this work, CMOS-compatible Ni-containing electrodes / HfO2 / TiN stacks were demonstrated switching in unipolar mode, with promising endurance >;103 cycles and good retention (stable LRS/HRS baking at 150°C). Ab-initio simulation and physical analysis Tof-SIMS were utilized to study the switching mechanisms in unipolar mode. Excellent bipolar switching in our Ni-containing electrodes / HfO2 /TiN stacks were also demonstrated, with >;104 endurance and good retention (stable LRS/HRS baking at 150°C). Physical models for both bipolar and unipolar modes were proposed based on electrical and physical characterization. Scaled 90nm devices in contact hole (CT) were also made and switching behavior was presented.
Keywords :
CMOS memory circuits; bipolar memory circuits; electrochemical electrodes; hafnium compounds; nickel; random-access storage; switching circuits; titanium compounds; Ab-initio simulation; CMOS-compatible electrode; Ni-HfO2-TiN; bipolar mode performance; non-integratable electrode material; resistive RAM devices; size 90 nm; temperature 150 degC; unipolar mode; unipolar switching RRAM; Aluminum oxide; Electrodes; Films; Nickel; Switches; Switching circuits; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Memory Workshop (IMW), 2011 3rd IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4577-0225-9
Electronic_ISBN :
978-1-4577-0224-2
Type :
conf
DOI :
10.1109/IMW.2011.5873223
Filename :
5873223
Link To Document :
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