GaAs MBE on vicinal substrates Si (001): Impact of nucleation and growth conditions on crystallographic properties of the epitaxial layers

GaAs films were grown with molecular beam epitaxy (MBE) method on Si substrates defected from plane (001) at 6° towards [110]. The processes of epitaxial layers nucleation and growth were controlled with the RHEED method. Investigations of the crystallographic properties of the grown structures were carried out by the methods of X-ray diffractometry and transmission electron microscopy (TEM). It is shown that the cyclic annealing and the LT-GaAs layers reduce the density of threading dislocations. The orientation GaAs film and the introduction of dislocation filters have little effect on the crystallographic properties of flms of GaAs/Si (001). It was found that in the LT-GaAs/Si layer the arsenic clusters are formed, as it occurs in the LT-GaAs/GaAs system without dislocation.