Title :
A12O3 optimization for Charge Trap memory application
Author :
Scozzari, C. ; Albini, G. ; Alessandri, M. ; Amoroso, S. ; Bacciaglia, P. ; Del Vitto, A. ; Ghidini, Giacomo
Author_Institution :
STMicroelectronics, Agrate Brianza
Abstract :
Aim of this work is the study the crystallization treatment of Alumina used as blocking oxide in Charge Trap memories. We have found that thermal treatment before gate deposition is able to crystallize Alumina giving better erase and write efficiency than any treatment after gate deposition, without degradation of the memory stack.
Keywords :
alumina; coating techniques; crystallisation; flash memories; heat treatment; Al2O3; alumina; blocking oxide; charge trap memory application; crystallization treatment; gate deposition; memory stack; thermal treatment; Aluminum oxide; Annealing; Capacitance-voltage characteristics; Capacitors; Crystallization; Current measurement; Dielectric measurements; Interface states; Temperature; Thermal conductivity;
Conference_Titel :
Ultimate Integration of Silicon, 2008. ULIS 2008. 9th International Conference on
Conference_Location :
Udine
Print_ISBN :
978-1-4244-1729-2
Electronic_ISBN :
978-1-4244-1730-8
DOI :
10.1109/ULIS.2008.4527171
