Radiation damage studies of silicon microstrip sensors

Author

Nakayama, T. ; Arai, S. ; Hara, K. ; Shimojima, M. ; Ikegami, Y. ; Iwata, Y. ; Johansen, L.G. ; Kobayashi, H. ; Kohriki, T. ; Kondo, T. ; Nakano, I. ; Ohsugi, T. ; Riedler, P. ; Roe, S. ; Stapnes, S. ; Stugu, B. ; Takashima, R. ; Tanizaki, K. ; Terada, S.

Author_Institution

Inst. of Phys., Tsukuba Univ., Ibaraki, Japan

Volume

1

fYear

1999

fDate

1999

Firstpage

421

Abstract

Various types of large area silicon microstrip detectors were fabricated for development of radiation-tolerant detectors operational in the LHC ATLAS SCT. The detectors were irradiated with 12-GeV protons at KEK to fluences of 1.7×10¹⁴ and 4.2×10¹⁴ protons/cm². Irradiated samples include n-on-n detectors with 4 kΩ cm bulk resistivity and p-on-n detectors with 1 kΩ cm and 4 kΩ cm bulk resistivities. Four patterns of p-stop structures are configured in the n-on-n detectors. Although Hamamatsu fabricated most of the detectors, included are p-on-n detectors by SINTEF, and those fabricated in modified process by Hamamatsu. The performances after irradiation are compared through the probability of creation of faulty coupling capacitors, C-V characteristics, charge collection curves, and total leakage current. The p-on-n are similar to n-on-n detectors in these performances, and are operational in the ATLAS radiation environment

Keywords

leakage currents; proton effects; silicon radiation detectors; 12 GeV; ATLAS; C-V characteristics; Si; Si microstrip sensors; bulk resistivity; charge collection curves; faulty coupling capacitors; large area Si microstrip detectors; leakage current; n-on-n detectors; p-on-n detectors; p-stop structures; proton irradiation; radiation damage; radiation-tolerant detectors; Conductivity; Large Hadron Collider; Leakage current; Microstrip; Physics education; Production; Protons; Radiation detectors; Silicon radiation detectors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium, 1999. Conference Record. 1999 IEEE

Conference_Location

Seattle, WA

ISSN

1082-3654

Print_ISBN

0-7803-5696-9

Type

conf

DOI

10.1109/NSSMIC.1999.842520

Filename

842520