Title :
In/out pad electrostatic discharge protection for sub-micron integrated circuits based on lateral bipolar transistor
Author :
Karpovich, Maksim S. ; Pichugin, Igor V. ; Vasilyev, Vladislav Yu
Author_Institution :
SibIS LLC, Novosibirsk, Russia
fDate :
June 29 2015-July 3 2015
Abstract :
Current status is presented for the development and experimental verifcation of 0.18 μm high voltage CMOS integrated circuits with pad-based ESD protection made with the use of lateral bipolar transistor. Developed I/O pads provide 2000 V ESD protection.
Keywords :
CMOS integrated circuits; bipolar transistors; electrostatic discharge; integrated circuit reliability; CMOS integrated circuits; ESD protection; bipolar transistor; in/out pad electrostatic discharge protection; size 0.18 mum; submicron integrated circuits; voltage 2000 V; Bipolar transistors; Electrostatic discharges; Integrated circuit modeling; Layout; Logic gates; Transistors; CMOS; ESD protection; I/O PAD; lateral npn transistor;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2015 16th International Conference of Young Specialists on
Conference_Location :
Erlagol
Print_ISBN :
978-1-4673-6718-9
DOI :
10.1109/EDM.2015.7184499