DocumentCode :
3518843
Title :
Gas flow simulation of a fluxless Si solder bonding oven
Author :
Illés, Balázs ; Kristóf, Gergely ; Jakab, László ; Ruszinkó, Miklós
Author_Institution :
Dept. of Electron. Technol., Budapest Univ. of Technol. & Econ., Budapest, Hungary
fYear :
2010
fDate :
12-16 May 2010
Firstpage :
326
Lastpage :
331
Abstract :
In this paper the technology of the “Linn” type Si fluxless solder bonding oven and gas flow simulations of the oven are discussed. This oven is used for fixing silicon chips on metal substrates with high temperature solder bonding process. The solder is applied in a foil form which is placed between the Si chip and the metal substrate and does not contain any flux. Therefore a reducing agent (Forming gas which is a mixture of 10 vol% H2 and 90 vol% N2) has to be applied to avoid the oxidation of the joints. The key factors of this soldering process has been studied which are the suitable temperature and the adequate H2 concentration. A 3D gas flow model of the oven has been prepared which is based on the FVM (Finite Volume Model) method. The thermal and gas flow circumstances - used the basic and new theoretical oven settings - have been compared by simulations applied the ANSYS - FLUENT system. The model was verified by the measurements of the H2 concentration, the temperature and the pressure inside the oven. The aim was to find new oven settings in order to improve the mechanical stability and decrease the void percent of the joints.
Keywords :
finite volume methods; flow simulation; mechanical stability; oxidation; soldering; ANSYS - FLUENT system; FVM; Si; finite volume model method; fixing silicon chips; fluxless solder bonding oven; gas flow simulation; high temperature solder bonding process; mechanical stability; metal substrate; metal substrates; oxidation; soldering process; Bonding; Cooling; Fluid flow; Heating; Ovens; Soldering; Vents;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Technology (ISSE), 2010 33rd International Spring Seminar on
Conference_Location :
Warsaw
Print_ISBN :
978-1-4244-7849-1
Electronic_ISBN :
978-1-4244-7850-7
Type :
conf
DOI :
10.1109/ISSE.2010.5547316
Filename :
5547316
Link To Document :
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