DocumentCode :
3519353
Title :
Damp heat versus field reliability for crystalline silicon
Author :
Whitfield, Kent ; Salomon, Asher ; Yang, Shuying ; Suez, Itai
Author_Institution :
Solaria Corp., Fremont, CA, USA
fYear :
2012
fDate :
3-8 June 2012
Abstract :
This paper demonstrates a multi-stress time-to-failure analysis of selected silicon PV cells due to metallic corrosion. This work indicates that the time-to-failure is a system effect and the kinetics of the reactions are different for different cells.
Keywords :
corrosion; elemental semiconductors; failure analysis; reaction kinetics; reliability; silicon; solar cells; Si; crystalline silicon; damp heat; field reliability; metallic corrosion; multistress time-to-failure analysis; reaction kinetics; selected silicon PV cells; DH-HEMTs; Heating; Indexes; Acceleration models; damp heat; degradation modeling; reliability; service lifetime prediction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
ISSN :
0160-8371
Print_ISBN :
978-1-4673-0064-3
Type :
conf
DOI :
10.1109/PVSC.2012.6317957
Filename :
6317957
Link To Document :
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