Title :
Study on carrier mobility in graphene nanoribbons
Author :
Yu, Xinxin ; Zhang, Jinyu ; Kang, Jiahao ; Qian, He ; Yu, Zhiping ; Tan, Yaohua
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
In this paper, the carrier mobility in graphene nanoribbons(GNRs) is studied. The total carrier mobility calculation includes four scattering mechanisms: surface polar phonons (SPP) scattering, intrinsic acoustic phonon scattering, line-edge roughness scattering, and Coulomb scattering. Carrier SPP scattering rates for five high-κ dielectric materials, including SiO2, Al2O3, HfO2, ZrO2 and AlN, are calculated based on Mahan´s theory. SPP scattering turns out to be important for GNRs with small width. Compared to other dielectric materials, AlN is more capable of suppressing both SPP scattering and Coulomb scattering.
Keywords :
III-V semiconductors; aluminium compounds; carrier mobility; dielectric materials; graphene; hafnium compounds; high-k dielectric thin films; nanostructured materials; silicon compounds; surface phonons; surface scattering; wide band gap semiconductors; zirconium compounds; Al2O3; AlN; C; Coulomb scattering; HfO2; Mahan theory; SiO2; ZrO2; acoustic phonon scattering; carrier mobility; graphene nanoribbons; high-κ dielectric materials; line-edge roughness scattering; surface polar phonon scattering; Aluminum oxide; Dielectric materials; Dielectrics; Logic gates; Phonons; Scattering; graphene nanoribbon; mobility; surface polar phonon;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-419-0
DOI :
10.1109/SISPAD.2011.6034959
