DocumentCode :
3520451
Title :
Low K CMOS90 2N gold wire bonding process development
Author :
Han, Ming-Chuan ; Yan, Bei-Yue
Author_Institution :
Freescale Semicond. (China), Ltd., Tianjin, China
fYear :
2009
fDate :
10-13 Aug. 2009
Firstpage :
737
Lastpage :
741
Abstract :
The electronics industry is mainly driven by the demand for smaller, faster, higher complexity, more reliable and cheaper device. Reduction in bond pad patch and low K wafer were introduced into mass production for miniaturation and signal transmission integrity. High safety requirement and longer working life demand high reliability performance especially in automotive and aerospace filed. Although trends in electronic packing have been focused on the development of flip chip, Wire bonding still cements its position in chip interconnection technology. In IC assembly, gold wire is the key material in wire bonding process to connect chip to substrate. 2N gold wire with specific dopant is applied in many types of package for stringent reliability requirement field. This study will focus on 2N gold wire application in wire bonding process.
Keywords :
electronics industry; gold; lead bonding; Au; electronic packing; electronics industry; low K CMOS90 2N gold wire bonding process development; mass production; Aerospace materials; Aerospace safety; Automotive engineering; Bonding processes; Electronics industry; Flip chip; Gold; Mass production; Wafer bonding; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Packaging Technology & High Density Packaging, 2009. ICEPT-HDP '09. International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-4658-2
Electronic_ISBN :
978-1-4244-4659-9
Type :
conf
DOI :
10.1109/ICEPT.2009.5270652
Filename :
5270652
Link To Document :
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