DocumentCode
3520554
Title
Statistical MOSFET current variation due to variation in surface roughness scattering
Author
Alexander, C.L. ; Asenov, A.
Author_Institution
Device Modelling Group, Univ. of Glasgow, Glasgow, UK
fYear
2011
fDate
8-10 Sept. 2011
Firstpage
275
Lastpage
278
Abstract
An efficient and accurate method to include surface roughness scattering from a general, realistic synthesized surface in 3D Monte Carlo simulation is presented with verification. The method is then applied to study drain current variation due to variation in surface roughness scattering in an 18nm bulk Silicon nMOSFET, highlighting substantially increased variation at low drain bias compared with electrostatic drift diffusion simulation.
Keywords
MOSFET; Monte Carlo methods; elemental semiconductors; silicon; surface roughness; surface scattering; 3D Monte Carlo simulation; Si; drain current variation; electrostatic drift diffusion simulation; low drain bias; realistic synthesized surface; size 18 nm; statistical MOSFET current variation; surface roughness scattering; Correlation; Electric potential; Monte Carlo methods; Rough surfaces; Scattering; Solid modeling; Surface roughness; Monte Carlo; surface roughness; variability;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location
Osaka
ISSN
1946-1569
Print_ISBN
978-1-61284-419-0
Type
conf
DOI
10.1109/SISPAD.2011.6035022
Filename
6035022
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