Title :
Statistical MOSFET current variation due to variation in surface roughness scattering
Author :
Alexander, C.L. ; Asenov, A.
Author_Institution :
Device Modelling Group, Univ. of Glasgow, Glasgow, UK
Abstract :
An efficient and accurate method to include surface roughness scattering from a general, realistic synthesized surface in 3D Monte Carlo simulation is presented with verification. The method is then applied to study drain current variation due to variation in surface roughness scattering in an 18nm bulk Silicon nMOSFET, highlighting substantially increased variation at low drain bias compared with electrostatic drift diffusion simulation.
Keywords :
MOSFET; Monte Carlo methods; elemental semiconductors; silicon; surface roughness; surface scattering; 3D Monte Carlo simulation; Si; drain current variation; electrostatic drift diffusion simulation; low drain bias; realistic synthesized surface; size 18 nm; statistical MOSFET current variation; surface roughness scattering; Correlation; Electric potential; Monte Carlo methods; Rough surfaces; Scattering; Solid modeling; Surface roughness; Monte Carlo; surface roughness; variability;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-419-0
DOI :
10.1109/SISPAD.2011.6035022
