Title :
A breakdown model and lifetime projection for thin gate oxide MOS devices
Author :
Liu, Chuan H. ; Grondin, Robert O. ; DeMassa, Thomas A. ; Sanchez, Julian J.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
Abstract :
An analytical breakdown model based upon a physical understanding of thin gate oxide has been developed. With the help of this model, which automatically accounts for all trapping, the oxide lifetimes under normal conditions could be estimated by extrapolating the high field accelerated data
Keywords :
MOS integrated circuits; carrier lifetime; electric breakdown; electron traps; extrapolation; integrated circuit modelling; MOS integrated circuits; TDDB; VLSI; analytical breakdown model; extrapolation; high field accelerated data; lifetime projection; oxide lifetimes; thin gate oxide MOS devices; trapping; Analytical models; Cathodes; EPROM; Electric breakdown; Electron traps; Equations; Life estimation; Lifetime estimation; Shape; Tunneling;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1997., Proceedings of the Twelfth Biennial
Conference_Location :
Rochester, NY
Print_ISBN :
0-7803-3790-5
DOI :
10.1109/UGIM.1997.616688
