DocumentCode :
3520714
Title :
A Level Set simulator for nanooxidation using non-contact atomic force microscopy
Author :
Filipovic, L. ; Selberherr, S.
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
fYear :
2011
fDate :
8-10 Sept. 2011
Firstpage :
307
Lastpage :
310
Abstract :
Atomic force microscopy (AFM) can be used as a lithographic technique capable of manufacturing nanometer-sized devices. A simulator for AFM, implemented in a Level Set environment, is presented. The simulator uses empirical models to deduce the shape of a desired nanodot based on the applied voltage, pulse time, and ambient humidity. The shape of an AFM nanowire depends on the same factors as the shape of the nanodot in addition to the wire´s orientation with respect to the (010) direction. An advantage of the presented approach is the ease with which further processing steps can be simulated in the same environment. Sample oxide nanodots and nanowires are analyzed, showing the ability of the process to generate nanometer sized structures.
Keywords :
atomic force microscopy; lithography; nanofabrication; nanowires; oxidation; ambient humidity; empirical models; level set simulator; lithographic technique; nanodots; nanometer-sized device manufacturing; nanooxidation; nanowire orientation; noncontact atomic force microscopy; Atomic force microscopy; Force; Humidity; Nanobioscience; Oxidation; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location :
Osaka
ISSN :
1946-1569
Print_ISBN :
978-1-61284-419-0
Type :
conf
DOI :
10.1109/SISPAD.2011.6035031
Filename :
6035031
Link To Document :
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