DocumentCode
352106
Title
Heavy ions induced latent stuck bits revealed by total dose irradiation in 4T cells SRAMs
Author
David, J.P. ; Loquet, J.G. ; Duzellier, S.
Author_Institution
ONERA-CERT, Toulouse, France
fYear
1999
fDate
1999
Firstpage
80
Lastpage
86
Abstract
Many stuck bits have been observed in 4T cells SRAMs exposed to heavy ions and total dose irradiations. This phenomenon, attributed to local dose deposition, is modeled accounting charge generation, recombination, transport and trapping in view of being better understood
Keywords
SRAM chips; ion beam effects; semiconductor device models; 4T cells SRAMs; charge generation; heavy ions induced latent stuck bits; local dose deposition; recombination; total dose irradiation; transport; trapping; Character generation; Circuits; Cosmic rays; Extraterrestrial phenomena; MOS devices; MOSFETs; Niobium; Random access memory; Space charge; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location
Fontevraud
Print_ISBN
0-7803-5726-4
Type
conf
DOI
10.1109/RADECS.1999.858550
Filename
858550
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