• DocumentCode
    352111
  • Title

    Response of MOSFETs from DMILL technology to high total dose levels

  • Author

    Armani, J.M. ; Brisset, C. ; Joffre, F. ; Dentan, M.

  • Author_Institution
    LETI, CEA, Centre d´´Etudes Nucleaires de Saclay, Gif-sur-Yvette, France
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    279
  • Lastpage
    284
  • Abstract
    We have investigated the response of MOS transistors fabricated using the DMILL process and irradiated to a total dose of 1MGy(Si)1 with a 60Co source. Results show that parameter shifts remain limited, thus authorizing use of this technology in environments involving very high levels of radiation
  • Keywords
    MOSFET; SIMOX; electron traps; gamma-ray effects; 1 MGy; DMILL technology; MOSFET; SIMOX; gamma radiation tolerance; total dose levels; trap density; Accidents; Coolants; Electronics industry; Fuel processing industries; Inductors; MOS devices; MOSFETs; Silicon on insulator technology; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
  • Conference_Location
    Fontevraud
  • Print_ISBN
    0-7803-5726-4
  • Type

    conf

  • DOI
    10.1109/RADECS.1999.858595
  • Filename
    858595
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=352111