Title :
0.35% absolute efficiency gain of bifacial N-type Si solar cells by industrial Metal Wrap Through Technology
Author :
Zhao, Wenchao ; Wang, Jianming ; Shen, Yanlong ; Wang, Ziqian ; Chen, Yingle ; Hu, Zhiyan ; Li, Gaofei ; Chen, Jianhui ; Xiong, Jingfeng ; Guillevin, N. ; Heurtault, B.J.B. ; Geerligs, L.J. ; Weeber, A.W. ; Bultman, J.H.
Author_Institution :
Yingli Green Energy Holding Co., Ltd., Baoding, China
Abstract :
N-type Metal Wrap Through (n-MWT) is presented as an industrially promising back-contact technology to reach high performance of silicon solar cells and modules. It can combine benefits from both n-type base and MWT metallization. In this paper, the integration of the MWT technique with a commercial industrial bifacial n-type Si Solar cell (239 cm2) process is described. After the integration, 0.35% absolute efficiency gain was achieved, and Voc gain and Isc gain up to 0.42% and 2.45%, respectively, were obtained, mainly attributed to reduced shadow loss and surface recombination. Based on calculations, the anticipation of further improvements for n-MWT solar cells, by taking better advantage of this integration, is also presented.
Keywords :
elemental semiconductors; semiconductor device metallisation; silicon; solar cells; surface recombination; MWT metallization; MWT technique integration; absolute efficiency gain; back-contact technology; bifacial n-type silicon solar cells; industrial metal wrap through technology; n-MWT solar cells; n-type metallization; shadow loss; solar modules; surface recombination; Abstracts; Gain measurement; bifacial; metal wrap through; n-type; silicon; solar cells;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-0064-3
DOI :
10.1109/PVSC.2012.6318055