Nanocontrollers characterization under radiation

Author

Bezerra, F. ; Barde, S. ; Carayon, J.L. ; Sarthou, M.

Author_Institution

CNES, Toulouse, France

fYear

1999

fDate

1999

Firstpage

588

Lastpage

592

Abstract

Within the framework of the MICROSAT and ROSETTA projects, CNES (French National Agency) has characterized the behavior of 4 nanocontrollers under heavy ions, protons and total dose. These products are frequently used in industrial and commercial applications. They have been chosen for ROSETTA (S-band transmitter/receiver and TM/TC) and MICROSAT (OBC and payload management unit) for the following reasons : easy use, numerous I/Os; 12C link, USART, timer, ADC, internal RAM and PROM; low consumption (a few mA at 5 V); and low mass and dimension (SOIC 28). The aim of this work was to determine the best candidate for MICROSAT application within the whole market offer

Keywords

integrated circuit testing; ion beam effects; microcontrollers; proton effects; radiation effects; space vehicle electronics; 5 V; CNES; MICROSAT project; ROSETTA project; S-band transmitter/receiver; SOIC 28; heavy ions; nanocontrollers characterization; payload management unit; protons; space radiation environment; total dose; Circuit testing; Error correction; Microprocessors; PROM; Payloads; Power supplies; Protons; Random access memory; Read-write memory; Registers;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on

Conference_Location

Fontevraud

Print_ISBN

0-7803-5726-4

Type

conf

DOI

10.1109/RADECS.1999.858653

Filename

858653