Title :
Deep ultraviolet enhanced wet chemical oxidation and etching of gallium nitride
Author :
Peng, L.-H. ; Chuang, Chih-Wei ; Hsu, Y.-C. ; Ho, J.-K. ; Huang, C.-N. ; Chen, C.-Y.
Author_Institution :
Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
Summary form only given. We present a use of deep UV irradiation to enhance the oxidative-dissolution process in the photoelectrochemical etching of gallium nitride (GaN). Our study indicates that the hydration effect plays an important role in establishing a peak etch rate as high as 90 nm/min. and 120 nm/min. in aqueous potassium hydroxide (KOH) and phosphorus acid (H/sub 3/PO/sub 4/) solutions at pH=14.25 and 0.75, respectively.
Keywords :
III-V semiconductors; dissolving; etching; gallium compounds; oxidation; photoelectrochemistry; solvation; wide band gap semiconductors; EDX; GaN; aqueous potassium hydroxide; deep UV enhanced wet chemical oxidation; deep UV irradiation use; hydration model; hydroxyl ions; oxidative-dissolution process; pH dependence; peak etch rate; phosphorus acid; photoelectrochemical etching; Chemicals; Dry etching; Electrodes; Gallium nitride; III-V semiconductor materials; Oxidation; Photomicrography; Plasma temperature; Wet etching; X-ray diffraction;
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
DOI :
10.1109/CLEO.1998.675987
