Title :
Density functional theory based simulation of carrier transport in silicon carbide and silicon carbide-silicon dioxide interfaces
Author :
Akturk, A. ; Salemi, S. ; Goldsman, N. ; Potbhare, S. ; Lelis, A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Maryland, College Park, MD, USA
Abstract :
We present density functional theory based calculations of band structure and density of states curves for bulk silicon carbide (SiC) and possible silicon carbide-silicon dioxide (SiC-SiO2) interfaces. We then show carrier transport calculations in these structures using Monte Carlo techniques. This is for understanding the origins of the bandgap traps arising from the SiC-SiO2 interface, which are of relatively high concentration in SiC MOSFETs compared to those in Si MOSFETs. It is also for investigating the effects of different atomic configurations on channel mobility, on-resistance, and thus losses in SiC power MOSFETs that are used as low-loss switching devices in high power high temperature applications.
Keywords :
MOSFET; Monte Carlo methods; density functional theory; electronic density of states; energy gap; semiconductor-insulator boundaries; silicon compounds; wide band gap semiconductors; MOSFET; Monte Carlo techniques; SiC; SiC-SiO2; atomic configurations; band structure; bandgap traps; carrier transport; channel mobility; density functional theory; density of states; high-power high-temperature applications; low-loss switching devices; power losses; silicon carbide-silicon dioxide interfaces; Carbon; Discrete Fourier transforms; Monte Carlo methods; Photonic band gap; Scattering; Silicon; Silicon carbide; Monte Carlo transport; Silicon carbide; density of states; silicon carbide interface traps; silicon carbide-silicon dioxide interface;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-419-0
DOI :
10.1109/SISPAD.2011.6035064