Title :
3D TCAD simulation of advanced CMOS image sensors
Author :
Essa, Z. ; Boulenc, P. ; Tavernier, C. ; Hirigoyen, F. ; Crocherie, A. ; Michelot, Julien ; Rideau, D.
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
This paper presents a full 3-Dimensionnal TCAD simulation methodology for advanced CMOS image sensors. In order to consider 3D process effects, full 3D TCAD process simulations have been carried out on different advanced pixels. Based upon the obtained 3D doping distributions, 3D opto-electrical device simulation results have been compared to both 2D based approaches and experimental results. Full 3D simulation results show a qualitative agreement with measurements.
Keywords :
CMOS image sensors; technology CAD (electronics); 3D TCAD simulation methodology; 3D doping distribution; 3D opto- electrical device simulation; 3D process effect; advanced CMOS image sensor; qualitative agreement; Doping; Mathematical model; Photodiodes; Semiconductor device modeling; Semiconductor process modeling; Solid modeling; Three dimensional displays; 3D simulation; CMOS process; Image sensors; TCAD;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-419-0
DOI :
10.1109/SISPAD.2011.6035082
