Molecular precursor species and their effects on the energy band-gap of hydrazine solution processed CuIn(S,Se)2 films

Author

Chung, Choong-Heui ; Lei, Bao ; Bob, Brion ; Duan, Hsin-Sheng ; Li, Sheng-Han ; Hou, William W. ; Yang, Wenbing ; Yang, Yang

Author_Institution

Dept. of Mater. Sci. & Eng., Univ. of California Los Angeles, Los Angeles, CA, USA

fYear

2012

fDate

3-8 June 2012

Abstract

We investigate the molecular species present in hydrazine CuIn(Se,S)₂ precursor solutions and their effects on the band-gap of final CuIn(Se,S)₂ films. [Cu6S4]2- ions and [In2(Se,S]4]2- ions are present. Sulfur from [In₂(Se,S)₄]^2- is more effectively incorporated into the final material. This finding makes it possible to precisely control the band gap of CuIn(Se,S)₂ films by adjusting the S/Se ratio of the [In₂(Se,S)₄]^2- ions in the final precursor solution. These results will enable the precise adjustment and optimization of the energy band-gap in solution-processed CuIn(Se,S)₂ absorber layers for the future fabrication of improved photovoltaic devices.

Keywords

III-VI semiconductors; copper compounds; indium compounds; photovoltaic cells; solar cells; CuInSSe; absorber layers; energy band gap; final precursor solution; hydrazine solution; molecular precursors; molecular species; photovoltaic devices; Color; Films; Indexes; Indium; Ions; USA Councils; CuInSe2; Molecular precursors; band gaps; photovoltaic materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE

Conference_Location

Austin, TX

ISSN

0160-8371

Print_ISBN

978-1-4673-0064-3

Type

conf

DOI

10.1109/PVSC.2012.6318137

Filename

6318137