Thin film active matrix organic electroluminescent display development

Author

Lungu, George ; Fuller, Lynn

Author_Institution

Dept. of Microelectron. Eng., Rochester Inst. of Technol., NY, USA

fYear

1997

fDate

20-23 Jul 1997

Firstpage

165

Lastpage

168

Abstract

An active organic electroluminescent display is being developed in a university environment. The device is a 64×32 pixel array. Each pixel consists of an organic electroluminescent (EL) diode integrated with a poly-silicon thin film transistors (TFT). This paper describes the design, the layout, the fabrication process, and characteristics of the thin film transistors used. A novel structure of high voltage vertical silicon thin film transistor has been discovered. The characteristics of these transistors are briefly presented here. The electric and spectral EL of the stand alone organic diodes are also shown here

Keywords

MISFET; electroluminescent displays; elemental semiconductors; organic compounds; silicon; thin film devices; thin film transistors; 2048 pixel; 32 pixel; 64 pixel; HV vertical Si TFT; Si; active organic electroluminescent display; fabrication process; high voltage thin film transistor; layout; organic EL diodes; organic electroluminescent diode; polysilicon TFT; thin film active matrix EL display; Active matrix organic light emitting diodes; Atmospheric measurements; Current measurement; Detectors; Electroluminescent devices; Plasma displays; Plasma temperature; Thin film transistors; Voltage measurement; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

University/Government/Industry Microelectronics Symposium, 1997., Proceedings of the Twelfth Biennial

Conference_Location

Rochester, NY

ISSN

0749-6877

Print_ISBN

0-7803-3790-5

Type

conf

DOI

10.1109/UGIM.1997.616717

Filename

616717