• DocumentCode
    3523322
  • Title

    Investigation of electrical characteristics of P3HT:PCBM organic solar cells

  • Author

    Shen, Yang ; Gupta, Mool C.

  • Author_Institution
    Univ. of Virginia, Charlottesville, VA, USA
  • fYear
    2012
  • fDate
    3-8 June 2012
  • Abstract
    Capacitance of P3HT(poly (3-hexylthiophene-2,5-diyl)):PCBM ([6,6]-phenyl C61-butyric acid methyl ester) bulk heterojunction solar cell was measured at different biases and different temperatures (25°C and 130°C). The capacitance was found to vary with bias voltages, and showed different trends with temperature, but the peak capacitance values and positions did not vary much. Mott-Schottky relation was used to model the behavior of capacitance in reverse bias. The capacitance of pure P3HT showed a different trend as compare to the P3HT:PCBM blend. The peak position did not vary, but the peak values decrease with temperature. Permittivity of P3HT was then calculated and the temperature dependence of exciton binding energy was revealed. The active layer thickness effect on the series resistance was also examined. The results show two regions, the slope quickly changes after certain thickness. Further investigation of electrical prosperities will provide insight on the origin of open circuit voltage and charge transport mechanism.
  • Keywords
    organic compounds; solar cells; ([6,6]-phenyl C61-butyric acid methyl ester) bulk heterojunction solar cell; (poly (3-hexylthiophene-2,5-diyl)) bulk heterojunction solar cell; Mott-Schottky relation; active layer thickness effect; capacitance values; charge transport mechanism; electrical characteristics; exciton binding energy; open circuit voltage mechanism; organic solar cells; series resistance; temperature 130 degC; temperature 25 degC; Capacitance; Heterojunctions; Market research; Photovoltaic cells; Resistance; Temperature; Temperature measurement; capacitance; exciton binding energy; organic materials; resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
  • Conference_Location
    Austin, TX
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4673-0064-3
  • Type

    conf

  • DOI
    10.1109/PVSC.2012.6318167
  • Filename
    6318167