Title :
Thin-film-bulk-acoustic-resonator gas sensor for the detection of organophosphate vapor detection
Author :
Wang, Jing-jing ; Chen, Da ; Zhang, Lu-yin ; Xu, Yan
Author_Institution :
Shandong Univ. of Sci. & Technol., Jinan, China
Abstract :
A novel design of an organophosphate vapor sensor based on a thin film bulk acoustic resonator (TFBAR) is presented. The TFBAR device is consisted of an AlN piezoelectric stack and a Mo/AlN Bragg reflector. Poly (vinylidene fluoride) (PVDF) is coated on the surface of the piezoelectric stack as the special sensitive layer. The concentration of the target gas can be analyzed by measuring the resonant frequency. Adsorption of organophosphate compounds onto the PVDF can increase its mass, and the frequency proportionally goes down. The results show that the TFBAR sensor can yield a rapid, sensitive, reversible and reproducible response to dimethyl methyl phosphonate (a stimulant of sarin) vapor. The gas sensitivity of the proposed sensor is 220 kHz ppm-1 in the the vapor concentration range of 2-30 ppm. This study proves that using the chemical functionalized thin film bulk acoustic resonator to detect the trace hazardous gas is feasible.
Keywords :
III-V semiconductors; acoustic resonators; acoustic transducers; aluminium compounds; frequency measurement; gas sensors; molybdenum; polymer films; thin film sensors; wide band gap semiconductors; AlN-Mo-AlN; Bragg reflector; PVDF; Poly (vinylidene fluoride); TFBAR gas sensor; dimethyl methyl phosphonate vapor; organophosphate compound adsorption; organophosphate vapor detection; organophosphate vapor sensor; piezoelectric stack; resonant frequency measurment; surface coating; target gas concentration; thin-film-bulk-acoustic-resonator gas sensor; Acoustics; Chemicals; Coatings; Electrodes; Resonant frequency; Sensitivity; Surface treatment; Gas sensor; Organophosphate vapor; Poly (vinylidene fluoride); Thin film bulk acoustic resonator;
Conference_Titel :
Piezoelectricity, Acoustic Waves and Device Applications (SPAWDA), 2011 Symposium on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4673-1075-8
DOI :
10.1109/SPAWDA.2011.6167205