DocumentCode
3524580
Title
Reduction of turn-on delay time with n-type modulation-doped 1.3-/spl mu/m strained multi-quantum we
Author
Nakahara, K. ; Tsuchiya, T. ; Uomi, K.
fYear
1995
fDate
10-14 July 1995
Firstpage
171
Keywords
Charge carrier lifetime; Delay effects; Epitaxial layers; Laser theory; Neodymium; Optical arrays; Quantum well devices; Semiconductor laser arrays; Threshold current; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 1995. Technical Digest. CLEO/Pacific Rim'95., Pacific Rim Conference on
Conference_Location
Chiba, Japan
Print_ISBN
0-7803-2400-5
Type
conf
DOI
10.1109/CLEOPR.1995.527095
Filename
527095
Link To Document