High efficiency CIGSe solar cells by combinatorially sputtered Cu(In,Ga) followed by selenization

Author

Liang, Haifan ; Liu, Wei ; Lee, Sang ; Van Duren, Jeroen ; Franklin, Tim ; Patten, Michael ; Nijhawan, Sandeep

Author_Institution

Intermolecular, Inc., San Jose, CA, USA

fYear

2012

fDate

3-8 June 2012

Abstract

Cu(In_1-x,Ga_x)Se₂ (CIGSe) based solar cells were fabricated using a sulfur-free sequential process. Combinatorial sputtering of Cu, In, and Ga results in a broad range in Cu/(In+Ga), Ga/(In+Ga), and thickness within one sample, allowing an accelerated learning curve to form high quality CIGSe by selenization. A high Ga content at the CIGSe surface allows for high efficiency and V_oc. The structural and optoelectronic properties of the absorber were characterized by SIMS, XRF, SEM, XRD and PL. EQE results confirmed a high band gap (~1.12eV) of the absorber surface. V_oc of 692mV was achieved with best cell efficiency of 17.7%.

Keywords

X-ray diffraction; copper compounds; gallium compounds; indium compounds; scanning electron microscopy; selenium compounds; solar cells; sputtered coatings; Cu(InGa)Se; PL. EQE; SEM; SIMS; XRD; XRF; absorber surface; band gap; cell efficiency; combinatorial sputtering; high efficiency CIGselenium solar cells; optoelectronic properties; selenization; sulfur-free sequential process; Area measurement; Gallium; Iron; X-ray scattering; copper indium gallium diselenide; current-voltage characteristics; photoluminescence; photovoltaic cells; semiconductor growth;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE

Conference_Location

Austin, TX

ISSN

0160-8371

Print_ISBN

978-1-4673-0064-3

Type

conf

DOI

10.1109/PVSC.2012.6318237

Filename

6318237