Improved wavelength trimming of distributed-feedback lasers using very narrow multiple quantum wells

Author

Inoue, Daisuke ; Nakano, Yoshiaki

Author_Institution

Dept. of Electron. Eng., Tokyo Univ., Japan

Volume

2

fYear

1999

fDate

18-22 Oct. 1999

Firstpage

1442

Abstract

We succeeded in wavelength trimming DFB lasers over a 0.44-nm spectral range toward long wavelengths. This improved spectral range is made possible by using narrow 2.7 nm multiple quantum well active region. We fabricated DFB lasers that have active layers consisting of fifteen compressively-strained InGaAs quantum wells. The wells are 2.7-nm wide and are separated by 1O-nm InGaAsP barriers. The SCH structure was grown on an n-type InP substrate by low pressure metal organic vapor phase epitaxy.

Keywords

III-V semiconductors; Kramers-Kronig relations; MOCVD; absorption coefficients; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser beams; laser feedback; optical fabrication; quantum well lasers; refractive index; vapour phase epitaxial growth; 10 nm; 2.7 nm; DFB lasers; InGaAs; InGaAs quantum wells; InGaAs/InGaAsP; InGaAsP; InGaAsP barriers; InP; active layers; compressively-strained quantum wells; distributed-feedback lasers; fabrication; low pressure metal organic vapor phase epitaxy; multiple quantum well active region; n-type InP substrate; separate confinement heterostructure; spectral range; very narrow multiple quantum wells; wavelength trimming; Distributed feedback devices; Epitaxial growth; Gas lasers; Indium phosphide; Laser feedback; Laser tuning; Optical device fabrication; Photonic band gap; Quantum well lasers; Refractive index;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, 1999. APCC/OECC '99. Fifth Asia-Pacific Conference on ... and Fourth Optoelectronics and Communications Conference

Conference_Location

Beijing, China

Print_ISBN

7-5635-0402-8

Type

conf

DOI

10.1109/APCC.1999.820547

Filename

820547