Title :
10 Gbit/s Semi-Insulating Buried Heterostructure Loss-less Reflective Amplified Modulator for Wavelength Agnostic Networks
Author :
Dupuis, N. ; Garreau, A. ; Jany, C. ; Decobert, Jean ; Alexandre, F. ; Brenot, Romain ; Landreau, Jean ; Lagay, Nadine ; Martin, F. ; Carpentier, D. ; Kazmierski, C.
Author_Institution :
III-V Lab., Alcatel-Thales, Marcoussis, France
Abstract :
We integrated an AlGalnAs modulator-amplifier using semi-insulating buried hetrostructure and selective area growth. The reflective component exhibits insertion gain, operates at 10Gbit/s over 80nm and links bi-directional 10km SMF up to 60°C.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; modulators; AlGaInAs; insertion gain; semi-insulating buried heterostructure loss-less reflective amplified modulator; wavelength agnostic networks; Absorption; Costs; Indium phosphide; Optical network units; Predictive models; Semiconductor optical amplifiers; Thermal resistance; Waveguide discontinuities; Waveguide transitions; Wavelength division multiplexing;
Conference_Titel :
Optical Fiber communication/National Fiber Optic Engineers Conference, 2008. OFC/NFOEC 2008. Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-55752-856-8
DOI :
10.1109/OFC.2008.4528436
