Title :
InGaAlAs-waveguide photodiodes for 1.55-/spl mu/m-band access networks
Author :
Tanaka, S. ; Matsuoka, Y. ; Ono, T. ; Tsuji, S.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
A waveguide photodiode for the 1.55-/spl mu/m band has been designed for surface-hybrid integration. High responsivity of 1.03 A/W and low dark current of 30 nA at 85/spl deg/C at a bias voltage of 1.2 V are demonstrated.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optics; optical communication equipment; optical fibre subscriber loops; photodiodes; 1.2 V; 1.55 mum; 1.55-/spl mu/m-band access networks; 30 nA; InGaAlAs; InGaAlAs-waveguide photodiodes; bias voltage; dark current; responsivity; surface-hybrid integration; Absorption; Charge carrier density; Dark current; Molecular beam epitaxial growth; Optical waveguides; Photodiodes; Temperature; Voltage; WDM networks; Wavelength measurement;
Conference_Titel :
Communications, 1999. APCC/OECC '99. Fifth Asia-Pacific Conference on ... and Fourth Optoelectronics and Communications Conference
Conference_Location :
Beijing, China
Print_ISBN :
7-5635-0402-8
DOI :
10.1109/APCC.1999.820621
