Title :
10 Gbps VCSELs with High Single Mode Output in 1310nm and 1550 nm Wavelength Bands
Author :
Syrbu, A. ; Mereuta, A. ; Iakovlev, V. ; Caliman, A. ; Royo, P. ; Kapon, Eli
Author_Institution :
Lab. of Phys. of Nano Struct., Swiss Fed. Inst. of Technol., Lausanne, Switzerland
Abstract :
A new generation of 10 Gb/s wafer fused VCSELs show high single mode output in excess of 2 mW at 80°C (6 mW at 20°C) in the 1310 nm band and 1.5 mW at 80°C (4 mW at 20°C) in the 1550 nm band. Error free transmission over 10 km of standard single mode fiber was performed with less than 1 dB penalty.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; optical fibre communication; optical fibres; quantum well lasers; surface emitting lasers; InAlGaAs-AlGaAs; VCSEL; bit rate 10 Gbit/s; distance 10 km; error free transmission; power 1.5 mW; power 2 mW; power 4 mW; power 6 mW; single mode fiber; single mode output; temperature 20 C; temperature 80 C; wavelength 1310 nm; wavelength 1550 nm; Energy consumption; Gallium arsenide; Laboratories; Optical fiber communication; Optical fiber networks; Optical fibers; Temperature distribution; Thermal resistance; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Optical Fiber communication/National Fiber Optic Engineers Conference, 2008. OFC/NFOEC 2008. Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-55752-856-8
DOI :
10.1109/OFC.2008.4528529