Nanometer scale observation of current-induced narrow domain wall depinning in perpendicular spin valves

Author

Ravelosona, D. ; Lacour, D. ; Katine, I.A. ; Terris, B.D.

Author_Institution

Hitachi Global Storage Technol., San Jose, CA, USA

fYear

2005

fDate

4-8 April 2005

Firstpage

135

Lastpage

136

Abstract

In this work, F1/Cu/F2 spin valves with F1 and F2 being perpendicularly magnetized is used which consist of high quality [Co/Pt]₄/Co/Cu/Co/Pt multilayers exhibiting a low distribution of propagation fields. F1 corresponds to the reference layer due to the higher perpendicular magnetic anisotropy (PMA) of the [Co/Pt] multilayers, whereas the free layer F2 exhibits a lower PMA due to a single Co/Pt interface. Domain wall (DW) motion in the free layer is detected via the GMR and extraordinary Hall effects (EHE) in which a thermally activated depinning process is found. As a conclusion, in spite of a narrow DW and strong pinning potential, a low critical current density is found. The current induced DW depinning can take place at much lower Jc than current induced DW streaming regime.

Keywords

Hall effect; cobalt; copper; current density; giant magnetoresistance; magnetic domain walls; magnetic multilayers; perpendicular magnetic anisotropy; platinum; spin valves; Co₄-Pt₄-Cu; GMR; critical current density; current-induced narrow domain wall depinning; domain wall motion; extraordinary Hall effects; multilayers; nanometer scale observation; perpendicular magnetic anisotropy; perpendicular spin valves; pinning potential; reference layer; thermally activated depinning process; Magnetic anisotropy; Magnetic domain walls; Magnetic domains; Magnetic multilayers; Magnetic separation; Manipulator dynamics; Perpendicular magnetic anisotropy; Spin valves; Sun; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International

Print_ISBN

0-7803-9009-1

Type

conf

DOI

10.1109/INTMAG.2005.1463496

Filename

1463496