Title :
376 nm ultra-violet laser diode annealing of Si thin-films
Author :
Wenchang Yeh ; Araishi, T. ; Morioka, Ryota
Author_Institution :
Dept. of Mech., Electr. & Electron. Eng., Shimane Univ., Matsue, Japan
Abstract :
376 nm ultra-violet laser diode was used for crystallization of Si thin-film on glass substrate for thin-film solar cell application. Laser beam was focused on Si film with a dimension of 1.5 × 8μm and it is scanned over Si film with velocities of among 0.3 m/s to 5.2 m/s. From scanning electron microscopy (SEM) and Raman scattering spectroscopy (Raman), it is found that lateral crystallization was induced in Si films, with its crystallinity comparable to that of excimer laser crystallized Si film.
Keywords :
Raman spectra; crystallisation; laser beam annealing; scanning electron microscopy; semiconductor thin films; solar cells; Raman scattering spectroscopy; SEM; Si; excimer laser crystallized silicon film; glass substrate; laser beam; lateral crystallization; scanning electron microscopy; thin-film solar cell application; ultra-violet laser diode; ultraviolet laser diode annealing; Annealing; Diode lasers; Films; Gas lasers; Laser beams; Semiconductor lasers; Silicon; laser annealing; laser diode; poly-Si; solar cell; thin-film;
Conference_Titel :
Renewable Energy Research and Applications (ICRERA), 2012 International Conference on
Conference_Location :
Nagasaki
Print_ISBN :
978-1-4673-2328-4
Electronic_ISBN :
978-1-4673-2329-1
DOI :
10.1109/ICRERA.2012.6477344
