DocumentCode
3528337
Title
Study of techniques for improving back-contact of CuO-nanowire emitters in a microstructure
Author
Zhan, R.Z. ; Chen, Jun ; Deng, S.Z. ; Xu, N.S.
Author_Institution
State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China
fYear
2009
fDate
20-24 July 2009
Firstpage
303
Lastpage
304
Abstract
In this study, the fabrication technologies for a gated CuO nanowire emitter were investigated. It is found that the interlayer between CuO nanoemitter and cathode electrode is crucial to achieve good emission. Attempts were made to improve the interlayer structure, including using multilayer-metal thin film electrode and etch residue cleaning.
Keywords
cathodes; copper compounds; crystal microstructure; nanofabrication; nanowires; thin films; CuO; cathode electrode; etch residue cleaning; interlayer structure; microstructure; multilayer-metal thin film electrode; nanowire emitters; Anodes; Cathodes; Electrodes; Etching; Fabrication; Green cleaning; Insulation; Microstructure; Nanowires; Sputtering;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International
Conference_Location
Shizuoka
Print_ISBN
978-1-4244-3587-6
Electronic_ISBN
978-1-4244-3588-3
Type
conf
DOI
10.1109/IVNC.2009.5271699
Filename
5271699
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