• DocumentCode
    3529303
  • Title

    Denuded-WNx/poly-Si gate technology for deep sub-micron CMOS

  • Author

    Lee, Byung Hak ; Park, Nae Hak ; Han, Sang Beom ; Lee, Kyungho

  • Author_Institution
    R&D Div, Hyundai MicroElectron. Co. Ltd., Cheongju, South Korea
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    225
  • Lastpage
    228
  • Abstract
    We found that RTA of amorphous WNx/poly-Si resulted in denudation of nitrogen atoms with the formation of low resistivity W and a highly reliable in situ barrier layer simultaneously. Furthermore, electrical characteristics of the denuded-WNx/poly-Si gate were superior to those of W/WNx/poly-Si gate after selective oxidation and post anneal processes
  • Keywords
    CMOS integrated circuits; ULSI; contact resistance; integrated circuit metallisation; integrated circuit reliability; oxidation; rapid thermal annealing; thermal stability; tungsten compounds; 0.15 mum; 800 to 1000 C; N atom denudation; RTA; W; WN-Si; deep sub-micron CMOS; denuded-WNx/poly-Si gate technology; electrical characteristics; gate structure; highly reliable in situ barrier layer; low resistivity W; post anneal; selective oxidation; sheet resistance; thermal stability; Amorphous materials; Bonding; CMOS technology; Hydrogen; Nitrogen; Oxidation; Performance evaluation; Rapid thermal annealing; Temperature; Thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI and CAD, 1999. ICVC '99. 6th International Conference on
  • Conference_Location
    Seoul
  • Print_ISBN
    0-7803-5727-2
  • Type

    conf

  • DOI
    10.1109/ICVC.1999.820886
  • Filename
    820886
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3529303