Device characteristics and reliability for 0.18 μm MOSFET with 20 Å gate oxide formed by RTO

Author

Yang, Jeong-Hwan ; Kang, Dae-Rim ; Kwak, Seong-Ho ; Lee, Su-Cheol ; Kim, Young-Wug ; Suh, Kwang Pyuk

Author_Institution

Syst. LSI Bus., Samsung Electron. Co. Ltd., Yongin, South Korea

fYear

1999

fDate

1999

Firstpage

253

Lastpage

256

Abstract

The characteristics of 20 Å gate oxide formed by an RTO (Rapid Thermal Oxidation) process with an NO+O₂ mixture ambient have been investigated. Due to the high nitrogen concentration in the oxide, good boron penetration suppression and higher interface trap density were observed. The low thermal cycle of the RTO process facilitated the formation of SSR (Super Steep Retrograde) channel and reduced RSCE (Reverse Short Channel Effect). The transistor performance was Idsat n/p=925/370 μA/μm for Vdd=1.5 V and Idoff n/p=10 nA/μm. The TDDB and hot carrier characteristics were evaluated and found to be satisfactory

Keywords

MOSFET; hot carriers; interface states; oxidation; rapid thermal processing; semiconductor device breakdown; semiconductor device reliability; 0.18 mum; 1.5 V; 20 angstrom; 20 angstroms gate oxide; B penetration suppression; MOSFET; N concentration; NO-O₂; NO-O₂ mixture ambient; RTO formation; Si-SiO₂; TDDB; device characteristics; hot carrier characteristics; interface trap density; low thermal cycle; rapid thermal oxidation; reliability; reverse short channel effect; super steep retrograde channel; transistor performance; Boron; Degradation; Density measurement; Hot carriers; Leakage current; MOS devices; MOSFET circuits; Nitrogen; Oxidation; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI and CAD, 1999. ICVC '99. 6th International Conference on

Conference_Location

Seoul

Print_ISBN

0-7803-5727-2

Type

conf

DOI

10.1109/ICVC.1999.820897

Filename

820897