Title :
RF W-band wafer-to-wafer transition
Author :
Herrick, K.J. ; Katehi, L.P.B.
Author_Institution :
Radiat. Lab., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Multiwafer silicon designs must provide an avenue for electrical signals to flow from wafer to wafer. For this purpose, a two-layer electrical bond is proposed to provide electrical connection between two coplanar waveguides on vertically stacked silicon wafers. Loss of approximately 0.1 dB is measured for this compact, packaged transition at W-band.
Keywords :
MIMIC; coplanar waveguides; integrated circuit interconnections; integrated circuit packaging; wafer bonding; 0.1 dB; W-band; coplanar waveguides; electrical connection; electrical signals; multiwafer designs; packaged transition; two-layer electrical bond; vertically stacked wafers; wafer-to-wafer transition; Circuits; Conductivity; Fabrication; Gold; Impedance; Insertion loss; Radio frequency; Silicon; Temperature; Wafer bonding;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.860888
