• DocumentCode
    3530101
  • Title

    Test results and irradiation performances of 3-D circuits developed in the framework of ATLAS hybrid pixel upgrade

  • Author

    Pangaud, P. ; Arutinov, D. ; Barbero, M. ; Breugnon, P. ; Chantepie, B. ; Clemens, J.C. ; Fei, R. ; Fougeron, D. ; Garcia-Sciveres, M. ; Godiot, S. ; Hemperek, T. ; Karagounis, M. ; Kruger, H. ; Mekkaoui, A. ; Perrot, L. ; Rozanov, S. ; Wermes, N.

  • Author_Institution
    Centre de Phys. des Particules de Marseille, Univ. de la Mediterranee Aix-Marseille II, Marseille, France
  • fYear
    2010
  • fDate
    Oct. 30 2010-Nov. 6 2010
  • Firstpage
    1551
  • Lastpage
    1555
  • Abstract
    Vertex detectors for High Energy Physics experiments require pixel detectors featuring high spatial resolution, very good signal to noise ratio and radiation hardness. A way to face new challenges of ATLAS/SLHC future hybrid pixel vertex detectors is to use the emerging 3-D Integrated Technologies. However, commercial offers of such technologies are only very few and the 3-D designer´s choice is then hardly constrained. Moreover, as radiation hardness and specially SEU tolerance of configuration registers is a crucial issue for SLHC vertex detectors and, as commercial data on this point are always missing, a reliable qualification program is to be developed for any candidate technology. We will present the design and test (including radiation tests with 70 kV, 60W X-Ray source and 24 GeV protons) of Chartered, 130nm Low Power 2-D chips realized for this qualification.
  • Keywords
    nuclear electronics; position sensitive particle detectors; semiconductor counters; 3D circuits; 3D integrated technologies; ATLAS future hybrid pixel vertex detectors; ATLAS hybrid pixel upgrade; SEU tolerance; SLHC future hybrid pixel vertex detectors; X-ray source; commercial data; configuration registers; high energy physics experiments; high spatial resolution; irradiation performances; low power 2D chips; radiation hardness; radiation tests; signal-to-noise ratio; Detectors; Latches; Layout; MOS devices; Pixel; Radiation effects; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium Conference Record (NSS/MIC), 2010 IEEE
  • Conference_Location
    Knoxville, TN
  • ISSN
    1095-7863
  • Print_ISBN
    978-1-4244-9106-3
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2010.5874036
  • Filename
    5874036