• DocumentCode
    3530202
  • Title

    Temperature dependent actuation voltage for longer MEMS switch lifetime

  • Author

    Lai, C.H. ; Wong, W.S.H.

  • Author_Institution
    Sch. of Eng. & Sci., Swinburne Univ. of Technol., Kuching, Malaysia
  • fYear
    2010
  • fDate
    3-4 Aug. 2010
  • Firstpage
    43
  • Lastpage
    48
  • Abstract
    A temperature dependent actuation voltage has been proposed to minimize the dielectric charging effect in micro-electromechanical system (MEMS) switch, leading to an improved switch lifetime. Mathematical models have been utilized to model the pull-in voltage variation throughout a range of thermal condition and simulate dielectric charging in the RF MEMS switch, enabling the analysis of charge built-up at the switch dielectric layer and substrate at different ambient temperature condition. The proposed temperature dependent actuation voltage has shown to reduce the dielectric charging effect of the RF MEMS switch as it minimize the applied actuation voltage to the MEMS switch during its long continuous operation.
  • Keywords
    microswitches; MEMS switch lifetime; RF MEMS switch; dielectric charging; mathematical models; microelectromechanical system switch; pull-in voltage variation; temperature dependent actuation voltage; thermal condition; Analytical models; Dielectric substrates; Mathematical model; Microelectromechanical systems; Micromechanical devices; Microswitches; Radiofrequency microelectromechanical systems; Switches; Temperature dependence; Voltage; Micro-electromechanical system (MEMS); Radio frequency (RF); Temperature; charging; dielectric; lifetime; reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quality Electronic Design (ASQED), 2010 2nd Asia Symposium on
  • Conference_Location
    Penang
  • Print_ISBN
    978-1-4244-7809-5
  • Type

    conf

  • DOI
    10.1109/ASQED.2010.5548159
  • Filename
    5548159