DocumentCode
3530202
Title
Temperature dependent actuation voltage for longer MEMS switch lifetime
Author
Lai, C.H. ; Wong, W.S.H.
Author_Institution
Sch. of Eng. & Sci., Swinburne Univ. of Technol., Kuching, Malaysia
fYear
2010
fDate
3-4 Aug. 2010
Firstpage
43
Lastpage
48
Abstract
A temperature dependent actuation voltage has been proposed to minimize the dielectric charging effect in micro-electromechanical system (MEMS) switch, leading to an improved switch lifetime. Mathematical models have been utilized to model the pull-in voltage variation throughout a range of thermal condition and simulate dielectric charging in the RF MEMS switch, enabling the analysis of charge built-up at the switch dielectric layer and substrate at different ambient temperature condition. The proposed temperature dependent actuation voltage has shown to reduce the dielectric charging effect of the RF MEMS switch as it minimize the applied actuation voltage to the MEMS switch during its long continuous operation.
Keywords
microswitches; MEMS switch lifetime; RF MEMS switch; dielectric charging; mathematical models; microelectromechanical system switch; pull-in voltage variation; temperature dependent actuation voltage; thermal condition; Analytical models; Dielectric substrates; Mathematical model; Microelectromechanical systems; Micromechanical devices; Microswitches; Radiofrequency microelectromechanical systems; Switches; Temperature dependence; Voltage; Micro-electromechanical system (MEMS); Radio frequency (RF); Temperature; charging; dielectric; lifetime; reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
Quality Electronic Design (ASQED), 2010 2nd Asia Symposium on
Conference_Location
Penang
Print_ISBN
978-1-4244-7809-5
Type
conf
DOI
10.1109/ASQED.2010.5548159
Filename
5548159
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