• DocumentCode
    3530290
  • Title

    High luminance FED

  • Author

    Nagao, M. ; Yoshida, T. ; Nakamura, K. ; Marushima, Y. ; Taniguchi, M. ; Itoh, S. ; Kanemaru, S.

  • Author_Institution
    Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
  • fYear
    2009
  • fDate
    20-24 July 2009
  • Firstpage
    55
  • Lastpage
    56
  • Abstract
    This paper discusses the prototype of a TFT-controlled high-luminance FED was fabricated. High luminance operation is demonstrated even at low anode voltage that is due to the built-in memory function. Ultra-high luminance operation is expected at a higher anode voltage.
  • Keywords
    brightness; field emission displays; anode voltage; field emission displays; high-luminance FED; Anodes; Circuits; Flat panel displays; Liquid crystal displays; Organic light emitting diodes; Prototypes; Space vector pulse width modulation; Thin film transistors; Timing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International
  • Conference_Location
    Shizuoka
  • Print_ISBN
    978-1-4244-3587-6
  • Electronic_ISBN
    978-1-4244-3588-3
  • Type

    conf

  • DOI
    10.1109/IVNC.2009.5271840
  • Filename
    5271840
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3530290