Title :
Application of silicon field emitter arrays for space-charge compensation of low energy ion beam
Author :
Takeuchi, M. ; Taguchi, S. ; Gotoh, Y. ; Suji, H. ; Ishikawa, J. ; Sakai, S.
Author_Institution :
Japan Sci. & Technol. Agency, Kyoto, Japan
Abstract :
In this study, the transport property of low energy ion beam (500 eV Ne+) is evaluated under space-charge compensated situation by means of supplying low energy electrons from the Si:C-FEA with decelerative electrodes.
Keywords :
compensation; electrodes; elemental semiconductors; field emitter arrays; ion mobility; silicon; space charge; wide band gap semiconductors; Si:C; decelerative electrodes; electron volt energy 500 eV; low energy electron; low energy ion beam transport properties; silicon field emitter arrays; space-charge compensation; Current distribution; Electrodes; Electron beams; Electron emission; Electron sources; Field emitter arrays; Ion beams; Laser excitation; Particle beams; Silicon;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International
Conference_Location :
Shizuoka
Print_ISBN :
978-1-4244-3587-6
Electronic_ISBN :
978-1-4244-3588-3
DOI :
10.1109/IVNC.2009.5271847
