• DocumentCode
    3530372
  • Title

    Application of silicon field emitter arrays for space-charge compensation of low energy ion beam

  • Author

    Takeuchi, M. ; Taguchi, S. ; Gotoh, Y. ; Suji, H. ; Ishikawa, J. ; Sakai, S.

  • Author_Institution
    Japan Sci. & Technol. Agency, Kyoto, Japan
  • fYear
    2009
  • fDate
    20-24 July 2009
  • Firstpage
    93
  • Lastpage
    94
  • Abstract
    In this study, the transport property of low energy ion beam (500 eV Ne+) is evaluated under space-charge compensated situation by means of supplying low energy electrons from the Si:C-FEA with decelerative electrodes.
  • Keywords
    compensation; electrodes; elemental semiconductors; field emitter arrays; ion mobility; silicon; space charge; wide band gap semiconductors; Si:C; decelerative electrodes; electron volt energy 500 eV; low energy electron; low energy ion beam transport properties; silicon field emitter arrays; space-charge compensation; Current distribution; Electrodes; Electron beams; Electron emission; Electron sources; Field emitter arrays; Ion beams; Laser excitation; Particle beams; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International
  • Conference_Location
    Shizuoka
  • Print_ISBN
    978-1-4244-3587-6
  • Electronic_ISBN
    978-1-4244-3588-3
  • Type

    conf

  • DOI
    10.1109/IVNC.2009.5271847
  • Filename
    5271847
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3530372