InGaAs/GaAs quantum dots as investigated by diffuse x-ray scattering

Strained self-organised InGaAs/GaAs quantum dots (QDs) are presently subject of intense research efforts due to their promising potential for optoelectronic device applications. In view of a deeper understanding of the QD nucleation process and related decomposition effects during overgrowth a detailed strain information becomes an essential analytical prerequisite. However, only indirect experimental evidence of the strain distribution in these structures is available until now, primarily from non-resonant and resonant photoluminescence studies. Furthermore information regarding averaged QD shape, size as well as content of Indium within QDs and wetting layer are desirable quantities from an applicational point of view.