DocumentCode
353042
Title
An RF transceiver for WDCT in a 25 GHz Si bipolar technology
Author
Li Puma, G. ; Geppert, W. ; Hadjizada, K. ; Van Waasen, S. ; Mevissen, W. ; Von Schwartzenberg, W. ; Heinen, S.
Author_Institution
Design Centre, Infineon Technol., Dusseldorf, Germany
Volume
1
fYear
2000
fDate
11-16 June 2000
Firstpage
273
Abstract
A RF Si bipolar transceiver IC for WDCT is presented. The complete transceiver operates from 3.1 V to 5.1 V and provides very high integration level. The receiver uses a single-conversion architecture with an image-reject frontend and needs no external trimming.
Keywords
UHF integrated circuits; bipolar MMIC; cordless telephone systems; digital radio; elemental semiconductors; silicon; spread spectrum communication; time division multiple access; transceivers; 25 GHz; 3.1 to 5.1 V; RF transceiver; Si; WDCT; bipolar technology; image-reject frontend; integration level; single-conversion architecture; transceiver IC; worldwide digital cordless telecommunication standard; Costs; Demodulation; Frequency shift keying; Power amplifiers; Radio frequency; Regulators; Synthesizers; Time division multiple access; Transceivers; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Print_ISBN
0-7803-5687-X
Type
conf
DOI
10.1109/MWSYM.2000.860975
Filename
860975
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