Multilevel finite ground coplanar line transitions for high-density packaging using silicon micromachining

Author

Becker, J.P. ; Katehi, L.P.B.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

1

fYear

2000

fDate

11-16 June 2000

Firstpage

303

Abstract

A 3D photolithographic technique is exploited to produce finite ground coplanar (FGC) transmission lines that transition into and out of silicon micromachined cavities. Each transition was found to introduce an average loss of less than 0.08 dB across the 2-40 GHz range for a cavity depth of 110 /spl mu/m. The demonstration of this technology is a significant step toward fully realizing the circuit packaging capabilities of micromachined silicon and offers the possibility of novel, broadband vertical transitions.

Keywords

MIMIC; MMIC; coplanar transmission lines; elemental semiconductors; integrated circuit packaging; micromachining; photolithography; silicon; 110 micron; 2 to 40 GHz; 3D photolithographic technique; Si; average loss; broadband vertical transitions; cavity depth; circuit packaging capabilities; high-density packaging; micromachined cavities; micromachining; multilevel finite ground coplanar line transitions; Chemicals; Costs; Electromagnetic heating; Fabrication; Flexible printed circuits; Micromachining; Microwave circuits; Packaging; Resists; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest. 2000 IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-7803-5687-X

Type

conf

DOI

10.1109/MWSYM.2000.860991

Filename

860991